CURRICULUM VITAE

Michael N. Kozicki, Ph.D.

Professor of Electrical Engineering

Fellow, National Academy of Inventors

Chartered Engineer

 

 

EDUCATION

Ph.D.  University of Edinburgh, United Kingdom, 1985.  Electronics and Electrical Engineering.

B.Sc.  University of Edinburgh, United Kingdom, 1980.  Electronics and Electrical Engineering.  Awarded First Class Honours (summa cum laude).

 

ACADEMIC POSITIONS

August 1996 – present

Professor of Electrical Engineering, School of Electrical, Computer, and Energy Engineering, Honors Faculty, Materials Science and Engineering Program Graduate Faculty, and researcher with the Center for Solid State Electronics Research/ASU Nanofab and Center for Applied Nanoionics, Arizona State University.

September 2003 – August 2004

            Interim and Founding Director of Entrepreneurial Programs, Fulton School of Engineering, Arizona State University.

July 1997 – June 2002

Director, Center for Solid State Electronics Research, Arizona State University.

August 1991 – August 1996

Associate Professor, Department of Electrical Engineering, Arizona State University.

August 1986 – August 1991

Assistant Professor, Department of Electrical Engineering, Arizona State University.

March 1985 – August 1986

Laboratory Manager and Senior Research Analyst, Center for Solid State Electronics Research, Arizona State University.

 

INDUSTRIAL POSITIONS

October 2013 – present

Founder and Principal, Idendrix, Inc.

April 1996 – present

Founder, Chairman and Chief Technology Officer, Axon Technologies Corporation.

May 2010 – August 2013

Chief Scientist, Adesto Technologies.

October 1983 – February 1985

Project Engineer, Hughes Microelectronics Ltd., U.K.

June – September, 1977 – 1980

Engineering trainee, Scottish Engineering Training Scheme, Medical Engineering Intern, Royal Infirmary of Edinburgh, U.K.

 

CONSULTING

Advanced Silicon Materials, Alcoa Electronic Packaging, ASM America, Black and Veatch, Burr-Brown, California Micro Devices, Du Pont, GTJS/Northern Telecom, IBM, Motorola, National Research Council of Canada, Research Corporation Technologies, ServiceMaster, Stanford University, 3M, Time-Warner Manufacturing, U.S. Army, Western Digital.

 

SCIENTIFIC AND PROFESSIONAL SOCIETY MEMBERSHIPS

·       Fellow, National Academy of Inventors.

·       Chartered Engineer, (C.Eng. – EC Professional Engineer), Engineering Council.

·       Member, Institute of Electrical and Electronics Engineers (IEEE).

·       Member, Institute of Physics (IOP).

·       Member, Materials Research Society (MRS).

·       Member, Eta Kappa Nu (HKN) engineering honor society.

 

HONORS AND DISTINCTIONS

·       Charter member of the ASU Academic Advisory Council.

·       Visiting Professor, University of Edinburgh, 2002 – 2014.

·       Adjunct Professor, Gwangju Institute of Science and Technology, Korea, 2009 – 2012.

·       Founding Member, Globalscot Network (appointed by the First Minister of Scotland).

·       Member of the Board of the Arizona Nanotechnology Cluster, 2004 – 2010.

·       Recipient of ASU Faculty Achievement Award for “Most Significant Invention”, 2007.

·       Best Paper Award, European Symposium on Phase Change and Ovonic Science (E*PCOS), 2006.

·       Best Paper Award, Non–Volatile Memory Technology Symposium (NVMTS), 2005.

·       Served on the Board of the Arizona Technology Council and the Governor's Council on Innovation and Technology, Technology Development and Transfer subcommittee, 2004.

·       Honored by the ASU Commission on the Status of Women for outstanding achievement and contribution towards advancing the status of women, 2003.

·       Recipient of the IEEE Phoenix Section Outstanding Educator, Research Award, 2001.

·       Recipient of College of Extended Education Outstanding Faculty Award, 1995.

·       Nominated for the Lemelson–MIT Prize for Invention and Innovation, 1994.

·       Recipient of Governor’s Recognition Award, Team Award, 1993.

·       Invention (cleanroom wheelchair) received Semiconductor International Editors Choice Award for 1993.

·       Recipient of Golden Key National Honor Society Outstanding Professor Award, 1991.

·       Recipient of College of Engineering and Applied Sciences Teaching Excellence Award, 1989.

·       Awarded Institution of Electrical Engineers Younger Members Premium in 1982 and 1985.

 

CONFERENCE ORGANIZATION

·       Co-organizer of the Symposium on Materials and Physics of Emerging Nonvolatile Memories at the 2012 Spring Meeting of the MRS.

·       Program Committee, 2011 International Nanoelectronics Conference, Taiwan. 

·       Co-organizer, 1st International Workshop on CBRAM Technology, 2010.

·       Member of the International Advisory Committee for the International Electron Devices and Materials Symposia, Taiwan, 2009.

·       Chair of the Technical Committee for the Non-Volatile Memory Technology Symposium, 2007.

·       Member of the Technical Committee for the Non-Volatile Memory Technology Symposium, 2006.

·       Series Editor, “Solid State Science and Engineering Series”, Thomson Science, New York, NY.

·       Acting Laboratory Manager for the Center for Solid State Electronics Research, 1986 – 1987.

·       Faculty Associate for the Department of Electrical Engineering, 1985.

 

ISSUED US PATENTS

M.N. Kozicki, “Carbon Enhanced Vapor Etching”, U.S. Patent Number 4,904,338 (1989).

A.R. Ziv and M.N. Kozicki, “Via Filling by Selective Laser Chemical Vapor Deposition”, U.S. Patent Number 4,938,996 (1990).

A.R. Ziv and M.N. Kozicki, “(An Apparatus for) Via Filling by Selective Laser Chemical Vapor Deposition”, U.S. Patent Number 5,060,595 (1991).

M.N. Kozicki and S.W. Hsia, “High Resolution Multi–layer Resist for Microlithography and Method Therefor”, U.S. Patent Number 5,314,772 (1994).

M.N. Kozicki, “Personal Electronic Dosimeter”, U.S. Patent Number 5,500,532 (1996).

M.N. Kozicki, “Wheelchair for Controlled Environments”, U.S. Patent Number 5,542,690 (1996).

M.N. Kozicki and W.C. West, “Programmable Metallization Cell”, U.S. Patent Number 5,761,115 (1998).

M.N. Kozicki and W.C. West, “Programmable Metallization Cell”, U.S. Patent Number 5,896,312 (1999).

M.N. Kozicki and W.C. West, “Programmable Metallization Cell”, U.S. Patent Number 5,914,893 (1999).

M.N. Kozicki and W.C. West, “Programmable Metallization Cell Structure and Method of Making Same”, U.S. Patent Number 6,084,796 (2000).

M.N. Kozicki, “Self–repairing interconnections for electrical circuits,” US Patent Number 6,388,324 (2002).

M.N. Kozicki and W.C. West, “Programmable Subsurface Aggregating Metallization Structure and Method of Making Same,” US Patent Number 6,418,049 (2002).

M.N. Kozicki, “Programmable interconnection system for electrical circuits,” US Patent Number 6,469,364 (2002).

M.N. Kozicki, “Programmable microelectronic devices and methods of forming and programming same,” US Patent Number 6,487,106 (2002).

M.N. Kozicki and M. Mitkova, “Microelectronic Programmable Device and Methods of Forming and Programming the Same,” US Patent Number 6,635,914 (2003).

M.N. Kozicki and W.C West, “Programmable sub–surface aggregating metallization structure and method of making same,” US Patent Number 6,798,692 (2004).

M.N. Kozicki, “Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same,” US Patent Number 6,825,489 (2004).

M.N. Kozicki, “Programming circuit for a programmable microelectronic device, system including the circuit, and method of forming the same,” US Patent Number 6,865,117 (2005).

M.N. Kozicki, “Microelectronic photonic structure and device and method of forming the same,” US Patent Number 6,914,802 (2005).

M.N. Kozicki, “Programmable structure, an array including the structure, and methods of forming the same,” US Patent Number 6,927,411 (2005).

M.N. Kozicki, “Programmable microelectronic devices and methods of forming and programming same,” US Patent Number 6,940,745 (2005).

M.N. Kozicki, “Programmable microelectronic device, structure, and system and method of forming the same,” US Patent Number 6,985,378 (2006).

M.N. Kozicki and M. Mitkova, “Microelectronic programmable device and methods of forming and programming the same,” US Patent Number 6,998,312 (2006).

M.N. Kozicki, “Tunable cantilever apparatus and method for making same,” US Patent Number 7,006,376 (2006).

M.N. Kozicki, M. Mitkova, C. Gopalan, M. Balakrishnan, “Programmable structure including an oxide electrolyte and method of forming programmable structure,” US Patent Number 7,101,728 (2006).

M.N. Kozicki and W.C. West, “Programmable sub–surface aggregating metallization structure and method of making same,” US Patent Number 7,142,450 (2006).

M.N. Kozicki, “Programmable microelectronic devices and methods of forming and programming same,” US Patent Number 7,145,794 (2006).

M.N. Kozicki, “Programmable structure, an array including the structure, and methods of forming the same,” US Patent Number 7,169,635 (2007).

M.N. Kozicki, “Micromechanical structure, device including the structure, and methods of forming and using same,” US Patent Number 7,180,104, (2007).

M.N. Kozicki, “Programmable surface control devices and method of making same,” US Patent Number 7,227,169 (2007).

M.N. Kozicki, “Programmable structure, an array including the structure, and methods of forming the same,” US Patent Number 7,288,781 (2007).

M.N. Kozicki, “Nanoscale programmable structures and methods of forming and using same,” US Patent Number 7,294,875 (2007).

M.N. Kozicki and M. Balakrishnan, “Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same,” US Patent Number 7,372,065 (2008).

M.N. Kozicki, M. Balakrishnan, and M. Mitkova, “Optimized solid electrolyte for programmable metallization cell devices and structures,” US Patent Number 7,385,219 (2008).

M.N. Kozicki, M. Mitkova, C. Gopalan, M. Balakrishnan, “Programmable logic circuit and method of using same,” US Patent Number 7,402,847 (2008).

M.N. Kozicki and M. Mitkova, “Microelectronic programmable device and methods of forming and programming the same,” US Patent Number 7,405,967 (2008).

M.N. Kozicki, “Optimized solid electrolyte for programmable metallization cell devices and structures,” US Patent Number 7,560,722 (2009).

M.N. Kozicki, “Microelectric programmable device and methods of forming and programming the same,” US Patent Number 7,675,766 (2010).

M.N. Kozicki, “Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same,” US Patent 7,728,322 (2010).

M.N. Kozicki, “Method for making a tunable cantilever device,” US Patent 7,763,158 (2010).

M.N. Kozicki, “Microelectronic programmable device and methods of forming and programming the same,” US Patent 7,929,331 (2011).

M.N. Kozicki, “Optimized solid electrolyte for programmable metallization cell devices and structures,” US Patent 8,022,384 (2011).

M.N. Kozicki, “Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same,” US Patent 8,134,140 (2012).

M.N. Kozicki, “Microelectronic programmable device and methods of forming and programming the same,” US Patent 8,213,217 (2012).

M.N. Kozicki, “Optimized solid electrolyte for programmable metallization cell devices and structures,” US Patent 8,213,218 (2012).

M.N. Kozicki, “Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same,” US Patent 8,218,350 (2012).

J. Chae and M.N. Kozicki, “Microphone devices and methods for tuning microphone devices,” US Patent 8,345,910 (2013).

M.N. Kozicki, “Electrical devices including dendritic metal electrodes,” US Patent 8,742,531 (2014).

M.N. Kozicki and M. Ren, “Dendritic metal structures, methods for making dendritic metal structures, and devices including them,” US Patent 8,999,819 (2015).

 

ISSUED FOREIGN PATENTS

M.N. Kozicki and W.C. West, “Programmable Metallization Cell Structure and Method of Making Same,” Taiwan Patent Number 102621 (1998).

M.N. Kozicki and W.C. West, “Programmable Metallization Cell Structure and Method of Making Same,” Singapore Patent Number 60635 (1999).

M.N. Kozicki and W.C. West, “Programmable Metallization Cell Structure and Method of Making Same,” Australia Patent Number 716236 (2000).

M.N. Kozicki and W.C. West, “Programmable Sub–Surface Aggregating Metallization Cell Structure and Method of Making Same,” Singapore Patent Number P–73763 (2000).

M.N. Kozicki, “Programmable Microelectronic Devices and Methods of Forming and Programming Same,” Singapore Patent Number 82714 (2002).

M.N. Kozicki and W.C. West, “Programmable Metallization Cell Structure and Method of Making Same,” Canada Patent Number 2,261,639 (2002).

M.N. Kozicki and W.C. West, “Programmable Metallization Cell Structure and Method of Making Same,” Korea Patent Number 0349927 (2002).

M.N. Kozicki and W.C. West, “Programmable Sub–Surface Aggregating Metallization Cell Structure and Method of Making Same,” Korea Patent Number 0371102 (2003).

M.N. Kozicki, “Microelectronic Programmable Device and Methods of Forming and Programming the Same,” Taiwan Patent Number 173820 (2003).

M.N. Kozicki and W.C. West, “Programmable Sub–Surface Aggregating Metallization Cell Structure and Method of Making Same,” Europe Patent Number 1044452 (2003).

M.N. Kozicki and W.C. West, “Programmable Sub–Surface Aggregating Metallization Cell Structure and Method of Making Same,” Hong Kong Patent Number 1032139 (2003).

M.N. Kozicki and W.C. West, “Programmable Sub–Surface Aggregating Metallization Cell Structure and Method of Making Same,” Australia Patent Number 751949 (2003).

M.N. Kozicki, “Programmable Microelectronic Devices and Methods of Forming and Programming Same,” Australia Patent Number 763809 (2003).

M.N. Kozicki, “Programmable Microelectronic Devices and Methods of Forming and Programming Same,” China Patent Number ZL00803716.7 (2004).

M.N. Kozicki, “Programmable Structure, An Array Including the Structure, and Methods of Forming the Same,” Taiwan Patent Number I224403 (2004).

M.N. Kozicki and W.C. West, “Programmable Metallization Cell Structure and Method of Making Same,” China Patent Number 97196865.9 (2004).

M.N. Kozicki and W.C. West, “Programmable Metallization Cell Structure and Method of Making Same,” Europe Patent Number 0939957 (2005).

M.N. Kozicki and W.C. West, “Programmable Metallization Cell Structure and Method of Making Same,” Hong Kong Patent Number 1023844 (2005).

M.N. Kozicki, “Programmable Surface Control Devices and Method of Making Same,” Australia Patent Number 2002353905 (2006).

M.N. Kozicki, “Programmable Surface Control Devices and Method of Making Same,” Europe Patent Number 1440485 (2006).

M.N. Kozicki and W.C. West, “Programmable Sub–Surface Aggregating Metallization Cell Structure and Method of Making Same,” China Patent Number 98813239.7 (2006).

M.N. Kozicki, “Programming Circuit for a Programmable Microelectronic Device, System Including the Circuit, and Method of Forming the Same,” Taiwan Patent Number I260629 (2006).

M.N. Kozicki, “Microelectronic Photonic Structure and Device and Method of Forming the Same,” Taiwan Patent Number 1267893 (2006).

M.N. Kozicki, “Programmable Microelectronic Devices and Methods of Forming and Programming Same,” Europe Patent Number 1159743 (2007).

M.N. Kozicki and W.C. West, “Programmable Sub–Surface Aggregating Metallization Cell Structure and Method of Making Same,” Canada Patent Number 2,312,841 (2007).

M.N. Kozicki, “Programmable Microelectronic Devices and Methods of Forming and Programming Same,” Hong Kong Patent Number 1039395 (2007).

M.N. Kozicki, “Programmable Structure, An Array Including the Structure, and Methods of Forming the Same,” China Patent Number ZL03810021.5 (2009).

 

INVITED PRESENTATIONS AT NATIONAL AND INTERNATIONAL MEETINGS

“Nanoscale Pattern Definition Using Silicon Dioxide”, 191st Meeting of the Electrochemical Society, May, 1997.

"Application of Chemically Enhanced Vapor Etching in the Fabrication of Nanostructures", Second International Workshop on Surfaces and Interfaces of Mesoscopic Devices, Kanapali, Hawaii, December, 1997.

“Novel Uses of Silicon Dioxide in Deep–Submicron Device Fabrication”, Fifth International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, 195th Meeting of the Electrochemical Society, May, 1999.

“Terabit Memories Are Made of This,” IEEE Symposium on VLSI Circuits, Kyoto, Japan, June, 2005.

“Highly Scalable Non–Volatile Memory Based on Solid Electrolytes,” Information Storage Industry Consortium (INSIC) Symposium on Alternative Storage Technologies, Monterey, CA, July, 2005.

KEYNOTE – “Nanostructured Solid Electrolytes for Non–Volatile Memory,” Euromat 2005, Prague, Czech Republic, September, 2005.

“Atoms to go… Applications of Programmable Metallization Cell Technology From Memory To Microfluidics,” SEMI/NBA Nanoforum, Chicago, IL, November, 2005.

“Highly scalable resistance–change memory using solid electrolytes,” IEEE International Solid State Circuits Conference (ISSCC), San Francisco, CA, February, 2006.

“Nanostructured solid electrolytes and the future of memory,” Emerging Nanotechnology Trends – Opportunities and Challenges, 1st Annual Arizona Nanotechnology Symposium, Tempe, AZ, March, 2006.

“Fully Scalable Non–Volatile Memory Based on Solid Electrolytes,” Workshop on Performance and Scaling of Non–Volatile Memory Materials, IBM Almaden Research Center, San Jose, CA, April, 2006.

“A Review of Solid Electrolyte Memory,” International Symposium on Integrated Ferroelectrics, Honolulu, HI, April, 2006.

BEST PAPER AWARD “Resistance–change devices based on solid electrolytes,” European Symposium on Phase Change and Ovonic Science (E*PCOS), Grenoble, France, May, 2006.

Programmable Metallization Cell: From Academic Research to Market Place,” Nano and Giga Challenges in Electronics and Photonics, Phoenix, AZ, March, 2007.

“Memory Devices Based on Solid Electrolytes,” Materials Research Society Spring Meeting, San Francisco, CA, April, 2007.

“Highly Scalable Resistance Change Memory,” Fifty–First International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, Denver, CO, May/ June, 2007.

“Solid electrolyte devices for memory and storage,” New Non–Volatile Memory Workshop, ITRI, Hsinchu, Taiwan, November, 2007.

“Ionic Memory in the Terabit Regime”, 3rd International Symposium on Tera–bit–level Non–volatile Memories, Seoul, Korea, August, 2008.

“The Evolution of Ionic Memory”, 214th Meeting of the Electrochemical Society, Honolulu, HI, October, 2008.

“Ionic Memory – Materials and Device Characteristics,” 9th International Conference on Solid–State and Integrated–Circuit Technology (ICSICT), Beijing, China, October, 2008.

“Ionic Memory and the Future of Storage?” IDEMA Symposium, Milpitas, CA, December 11, 2008.

“Functional Nanomaterials and the Birth of Ionic Memory,” 138th Annual Meeting of the Minerals, Metals, and Materials Society (TMS), San Francisco, CA, February 15–19, 2009.

“Cation–Based Resistive Memory: Materials and Mechanisms,” Materials Research Society (MRS) Spring Meeting, San Francisco, CA, April 13–17, 2009.

“Ionic Memory and Storage”, Information Storage Industry Consortium (INSIC) Symposium on Alternative Storage Technologies, Santa Clara, CA, August 5, 2009.

“Nanoionics: Applications in Information Technology”, 14th Canadian Semiconductor Technology Conference and Nano and Giga Challenges 2009, Hamilton, Ontario, Canada, August 10–14, 2009.

“Nanoionics in Memory and Storage,” International Electron Devices and Materials Symposia, Taoyuan, Taiwan, November 19–20, 2009.

“Programmable Metallization Cell Memory in Active and Passive Arrays,” SEMATECH Emerging Technologies in Solid State Devices Workshop, Baltimore, MD, December 5 – 6, 2009.

"Can Solid–State Electrochemistry Save the Memory Industry?" Electrochemistry Gordon Research Conference, Ventura, CA, January 10 – 15, 2010.

“Ionic Materials and Devices in Memory and Storage,” Semicon Korea, Seoul, Korea, February 2 – 4, 2010.

“Operational Aspects of Cation–Based Resistive Memory,” MRS Spring Meeting, San Francisco, CA, April 5 – 10, 2010.

“Electrical characterization of Ag–Ge–S and Cu–SiO2 devices,” 1st International Workshop on CBRAM Technology, Stanford University, Palo Alto, CA, April 23–24, 2010.

“Nanoionics and the road to low energy memory,” CMOS Emerging Technologies, Whistler, Canada, May 19 – 21, 2010.

“Overview of Cation–Based Resistive Memory,” Advances in Nonvolatile Memory Materials and Devices, Suzhou, China, July 11 – 16, 2010.

“Introduction to CBRAM,” Non–volatile Memory Conference, Santa Clara, CA, September 22, 2010.

“Cation Memory Mechanisms,” 2010 ITRS Memory Materials Workshop, Tsukuba, Japan, November 30, 2010.

KEYNOTE – “Atoms to go… Ionic Memory and Data Storage,” IEEE Workshop on Microelectronics and Electron Devices, Boise, ID, April 22, 2011.

“Cation–based resistive memory,” 4th IEEE International Nanoelectronics Conference, Tao–Yuan, Taiwan, June 21–24, 2011.

KEYNOTE – “Ionic memory,” 1st International Workshop on RRAM, IMEC, Leuven, Belgium, October 20–21, 2011.

“Ionic Memory,” Workshop on Current Status and Future Directions of NonVolatile Memory Technology, IEEE Santa Clara Valley Electron Devices Society, Santa Clara, CA, November 4, 2011.

Cation–based Resistive Memory,” Symposium on Emerging Non–Volatile Memory Technologies, IEEE San Francisco Bay Area Nanotechnology Council, Santa Clara, CA, April 6, 2012.

“Conductive Bridge Random Access Memory,’” The Fifth Workshop on Fault-Tolerant Spaceborne Computing Employing New Technologies, Albuquerque, NM, May 29-June 1, 2012.

“Will Future Non-Volatile Memories Disrupt NAND?” Evening Panel, International Electron Devices Meeting (IEDM), San Francisco, CA, December 10-12, 2012.

“Ionic memory and the future of the semiconductor industry,” 57th International Conference on Electron, Ion, and Photon Beams and Nanofabrication (EIPBN), Nashville, TN, May 28 – 31, 2013.

“Ionic Memory - Materials and Devices,” AVS 60th International Symposium, Long Beach, CA, October 27 – November 1, 2013.

“Programmable Metallization Cells in Memory and Switching Applications,” 224th ECS Meeting, San Francisco, CA, October 27 – November 1, 2013.

“Conductive-bridge memory (CBRAM) with excellent high-temperature retention,” IEEE International Electron Devices Meeting (IEDM), Washington, D.C., December 9-11, 2013.

"Radiation tolerance of Programmable Metallization Cell memory devices," American Chemical Society Spring Meeting, Dallas, TX, March 16-20, 2014.

“Current status of cation-based resistive memory,” International conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, September 8-11, 2014.

“The Programmable Metallization Cell Technology Platform” Northrop-Grumman Nanotechnology Workshop, Redondo Beach, CA, July 6-7, 2015.

 

PUBLICATIONS AND PRESENTATIONS

Refereed archival journal papers

M.N. Kozicki, A.R. Dinnis and J.M. Robertson, “A Low Energy Electron Beam Annealing System:  Design, Capability and Use”, Scanning, vol. 6, 3–7 (1984).

Q.Z. Zhang, M.N. Kozicki and D.K. Schroder, “The Effects of Non–uniform Oxide Thickness on MOSFET Performance”, IEEE Trans. Electron Devices, vol. ED–35, 1395–1397 (1988).

G.H. Bernstein, W.P. Liu, Y.N. Khawaja, M.N. Kozicki, D.K. Ferry and L. Blum, “High–resolution Electron–beam Lithography with Negative Organic and Inorganic Resists”, J. Vac. Sci. Technol., vol. B6, 2298–2302 (1988).

M.N. Kozicki, J.M. Robertson, H. Kheyrandish and A.E. Hill, “Silicide/Poly–silicon Gate Formation Using Dynamic Recoil Mixing”, J. Electrochem. Soc., vol. 136, 873–875 (1989).

M.N. Kozicki and J.M. Robertson, “Silicide Formation on Polycrystalline–silicon by Direct Metal Implantation”, J. Electrochem. Soc., vol. 136, 878–881 (1989).

D. Henscheid, M.N. Kozicki, G.W. Sheets, M. Mughal, I. Zwiebel and R.J. Graham, “Rapid Thermal Nitridation of Thin SiO2 Films”, J. Electronic Materials, vol. 18, 99–104 (1989).

M.N. Kozicki, S.W. Hsia, A.E. Owen and P.J.S. Ewen, “PASS – A Chalcogenide–based Lithography Scheme for I.C. Fabrication”, J. Non–cryst. Solids, vol. 137/138, 1341–1344 (1991).

F. Yano, V.A. Burrows, M.N. Kozicki and J. Ryan, “Infrared Study of Electron–beam Induced Reactions in Langmuir–Blodgett Films of Stearic Acid”, J. Vac. Sci. Technol., vol. 11, 219–223 (1993).

P. Rastogi, M.N. Kozicki and F. Golshani, “EXPRO – an Expert System Based Process Manager”, IEEE Trans. Semiconductor Manufacturing, vol. 6, 207–218 (1993).

F. Golshani, M.N. Kozicki and P. Rastogi, “A Real–Time Expert System for Process Management – The Design and Development of EXPRO”, Int. Journal of Artificial Intelligence Tools, vol. 2, 541–556 (1993).

T.K. Whidden, J. Allgair, J.M. Ryan, M.N. Kozicki and D.K. Ferry, “Chemically–Amplified Etching of Oxides for Micro– and Nanolithographic Masks”, J. Electrochem. Soc., vol. 142, 1199–1205 (1995).

M.N. Kozicki, R.W. Roberson, T.K. Whidden and S.E. Kersey, “Directed Growth of Uromyces Hyphae on Integrated Circuit Substrates”, J. Vac. Sci. Technol., vol. A13, 1808–1813 (1995).

T.K. Whidden, J. Allgair, A. Jenkins–Gray and M.N. Kozicki, “Nanoscale STM Patterning of Silicon Dioxide Thin Films by Catalyzed HF Vapor Etching”, J. Vac. Sci. Technol., vol. B13, 1337–1341 (1995).

T.K. Whidden, J. Allgair, A. Jenkins–Gray, M.N. Kozicki, and D.K. Ferry,  “Nanoscale Lithography with Electron Exposure of SiO2 Resists”, Jap. J. Appl. Phys., vol. 34, 4420–4425 (1995).

J. Allgair, M. Khoury, M.J. Rack, T.K. Whidden, M.N. Kozicki, and D.K. Ferry “Formation of Nanoscale Cobalt Silicide and Gold Wires Using Electron Beam and Chemically Enhanced Vapor Etching”, J. Vac. Sci. Technol., vol. A14, 1855–1859 (1996).

M. Pan, M. Yun, M.N. Kozicki and T.K. Whidden, “Self–assembled Monolayer Resists and Nanoscale Lithography of Silicon Dioxide Thin Films by Chemically Enhanced Vapor Etching (CEVE), Microstructures and Superlattices, vol. 20, 369–376 (1996).

M. N. Kozicki, J. Allgair, D.K. Ferry, and T.K. Whidden, “The Use of Electron–beam Exposure and Chemically Enhanced Vapor Etching of SiO2 for Nanoscale Fabrication”, Physica B, vol. 227, 318–322 (1996).

D.K. Ferry, M. Khoury, D.P. Pivin, K.M. Connolly, T.K. Whidden, M.N. Kozicki, and D.R. Allee, “Nanolithography”, Semiconductor Science and Technology, B, vol. 11, 1552 – 1557 (1996).

J. Allgair, J.M. Ryan, H.J. Song, M.N. Kozicki, T.K. Whidden and D.K. Ferry, “Nanoscale Patterning of Silicon Dioxide Thin Films by Catalyzed HF Vapor Etching”, Nanotechnology, vol. 7, 351 – 355 (1996).

T.K. Whidden, D.K. Ferry, M.N. Kozicki, E. Kim, A. Kumar, J. Wilbur and G.M. Whitesides, “Pattern Transfer to Silicon by Microcontact Printing and RIE”, Nanotechnology, vol. 7, 447–451 (1996).

T.K. Whidden, A. Jenkins–Gray, M. Pan, and M.N. Kozicki, and “Chemically Enhanced Vapor Etching (CEVE) with Alkyl Acid Self–Assembled Monolayer Resists for Nanometer–Scale Lithography of Thin Film Silicon Dioxide Masks”, J. Electrochem. Soc., vol. 144, 605 – 616 (1997).

H.A. McNally, M.N. Kozicki, R.W. Roberson, and T.K. Whidden, “Electrical Characterization of Uromyces Germ Tubes Grown on Integrated Circuit Substrates”, J. Vac. Sci. Technol., vol. A15, 779–783 (1997).

A.H.M. Kamal, M.J. Rack, M.N. Kozicki, D.K. Ferry, J. Lutzen, and J.A. Hallmark, “Ultrathin Cobalt Silicide Layers Formed by Rapid Thermal Processing of Metal on Amorphous Silicon”, J. Vac. Sci. Technol., vol. B15, 899–902 (1997).

M.N. Kozicki, B. Kardynal, S.–J. Yang, T. Kim, M.V. Sidorov, and D.J. Smith, "Application of Chemically Enhanced Vapor Etching in the Fabrication of Nanostructures", Semicond. Sci. Technol., vol. 13, A63–A66 (1998).

A.H.M. Kamal, J. Lutzen, B.A. Sanborn, M.V. Sidorov, M.N. Kozicki, D.J. Smith, and D.K. Ferry, "A Two Terminal Nanocrystalline Silicon Memory Device at Room Temperature", Semicond. Sci. Technol., vol. 13, 1328–1332 (1998).

J. Lutzen, A.H.M. Kamal, M.N. Kozicki, D.K. Ferry, M.V. Sidorov, and D.J. Smith, "Structural Characterization of Ultrathin Nanocrystalline Films Formed by Annealing Amorphous Silicon", J. Vac. Sci. Technol., vol. B16, 2802–2805 (1998).

M.H. Yun, V.A. Burrows, and M.N. Kozicki, "Analysis of KOH Etching of (100) Silicon On Insulator for the Fabrication of Nanoscale Tips", J. Vac. Sci. Technol., vol. B16, 2844–2848 (1998).

W.C. West, K.Sieradzki, B. Kardynal, and M.N. Kozicki, "Equivalent Circuit Modeling of the Ag/As0.24S0.36Ag0.40/Ag System Prepared by Photodissolution of Ag", J. Electrochem. Soc., vol. 145, 2971–2974 (1998).

M.N. Kozicki, S.–J. Yang, T. Kim, and B. Kardynal, “A Novel Nanoscale Resist Using 10–Undecanoic Acid Monolayers on Silicon Dioxide”, Microelectronic Engineering, vol. 47, 239–241 (1999).

Minhee Yun, Anthony Turner, Ronald J. Roedel, and Michael N. Kozicki, “Novel Lateral Field Emission Device fabricated on Silicon–on–Insulator Material, J. Vac. Sci. Technol., vol. B17, 1–6 (1999).

M.N. Kozicki, S.–J. Yang, and B.W. Axelrod, “Electron–beam exposure of self–assembled monolayers of 10–undecenoic acid”, Superlattices and Microstructures, vol. 27, 481–484 (2000).

M.N. Kozicki, M. Yun, S.–J. Yang, J.P. Aberouette, and J.P. Bird, “Nanoscale effects in devices based on chalcogenide solid solutions”, Superlattices and Microstructures, vol. 27, 485–488 (2000).

J. Yang, T.J. Thornton, S.M. Goodnick, M. Kozicki and J. Lyding, “Buried channel silicon–on–insulator MOSFETs for hot–electron spectroscopy,” Physica B, vol. 314, 354–357 (2002).

M.Mitkova and M.N. Kozicki, “Silver incorporation in Ge–Se glasses used in programmable metallization cell devices,” J. Non–Cryst. Solids, vol. 299–302, 1023–1027 (2002).

M.N. Kozicki, M. Mitkova, J. Zhu, and M. Park, “Nanoscale phase separation in Ag–Ge–Se glasses,” Microelectronic Engineering, vol. 63/1–3,155–159 (2002).

Jinman Yang, L. de la Garza, T.J. Thornton, M. Kozicki, and D. Gust, “Controlling the Threshold Voltage of a MOSFET by Molecular Protonation of the Surface,” J. Vac. Sci. Technol. B, vol. 20, 1706–1709 (2002).

G.M. Laws, T.J. Thornton, Jinman Yang, L. de la Garza, M. Kozicki, and D. Gust, “Molecular Control of the Drain Current in a Buried Channel MOSFET,” Phys. Stat. Sol., vol. 233, 83–89 (2002).

P.S. Chakraborty, M.R. McCartney, J. Li, C. Gopalan, M. Gilbert, S. M. Goodnick, T.J. Thornton, M. N. Kozicki, “Electron Holographic Characterization of Ultra Shallow Junctions in Si for nanoscale MOSFETs,” IEEE Trans. Nanotechnology, vol. 2, 102–109 (2003).

P. Chakraborty, C. Gopalan, J. Yang, T. Kim, Z. Wu, M.R. McCartney, S. M. Goodnick, M. N. Kozicki, T.J. Thornton, “Shallow Source–Drain Extensions for Deep Submicron MOSFETs Using Spin–On Dopants,” IEEE Trans. Electron Devices, vol. 50/5, 1277–1283 (2003).

M. N. Kozicki, M. Mitkova, and J.P. Aberouette, “Nanostructure of Solid Electrolytes and Surface Electrodeposits,” Physica E: Low–dimensional Systems and Nanostructures, vol. 19/1–2, 161–166 (2003).

P.S. Chakraborty, M.R. McCartney, J. Li, C. Gopalan, U. Singisetti, S. M. Goodnick, T.J. Thornton, M. N. Kozicki, “Electron Holographic Characterization of Nanoscale Charge Distributions for Ultra Shallow PN Junctions in Si,” Physica E: Low–dimensional Systems and Nanostructures, vol. 19/1–2, 167–172 (2003).

Maria I. Mitkova, Michael N. Kozicki, Janmichael P. Aberouette, “Morphology of Electrochemically Grown Silver Deposits on Silver–Saturated Ge–Se Thin Films,” J. Non–cryst. Solids, vol. 326/327, 425–429 (2003).

G.M. Laws, T.J. Thornton, Jinman Yang, L. de la Garza, M. Kozicki, D. Gust, J. Gu, and D. Sarid, “Drain Current Control in a Hybrid Molecular/MOSFET device,” Physica E, vol. 17, 83–89 (2003).

M.N. Kozicki, P. Maroufkhani, M. Mitkova, “Flow Regulation in Microchannels via Electrical Alteration of Surface Properties,” Superlattices and Microstructures, vol. 34/3–6, 467–473 (2004).

M.N. Kozicki, M. Mitkova, M. Park, M. Balakrishnan, and C. Gopalan, “Information Storage using Nanoscale Electrodeposition of Metal in Solid Electrolytes,” Superlattices and Microstructures, vol. 34/3–6, 459–465 (2004).

M. Mitkova, M.N. Kozicki, H.C. Kim, and T.L. Alford, “Thermal and Photodiffusion of Ag in S–Rich Ge–S amorphous films,” Thin Solid Films, vol. 449, 248–253 (2004).

M. Mitkova, M. N. Kozicki, H. Kim, T. Alford, “Local Structure Resulting From Photo– and Thermal Diffusion of Ag in Ge–Se Thin Films,” J. Non–Cryst. Sol., vol 338–340C, 552–556 (2004).

Michael N. Kozicki, Mira Park, and Maria Mitkova, “Nanoscale Memory Elements Based on Solid–State Electrolytes,” IEEE Trans. Nanotechnology, vol. 4, 331–338 (2005).

Nad E. Gilbert, Chakravarthy Gopalan, and Michael N. Kozicki, “A macro model of programmable metallization cell devices,” Solid State Electronics, vol. 49, 1813–1819 (2005).

S. Enderling, C.L. Brown III, S. Smith, M.H. Dicks, J.T.M. Stevenson, M. Mitkova, M.N. Kozicki, and A.J. Walton, “Sheet Resistance Measurement of Non–Standard Cleanroom Materials Using Suspended Greek Cross Test Structures,” IEEE Trans. Semiconductor Manufacturing, vol. 19, 1, 2–9, (2006).

M.N. Kozicki and M. Mitkova, “Mass transport in chalcogenide electrolyte films – materials and applications,” Journal of Non–Crystalline Solids, vol. 352, 567–577 (2006).

M. Mitkova , M.N. Kozicki, H.C. Kim, and T.L. Alford, “Crystallization effects in annealed thin Ge–Se films photodiffused with Ag,” Journal of Non–Crystalline Solids, vol. 352, 1986–1990 (2006).

M.N. Kozicki, C. Gopalan, M. Balakrishnan, and M. Mitkova, “A Low–Power Nonvolatile Switching Element Based on Copper–Tungsten Oxide Solid Electrolyte,” IEEE Trans. Nanotechnology, vol. 5, 535–544 (2006).

M. Balakrishnan, M.N. Kozicki, C.D. Poweleit, S. Bhagat, T. L. Alford, and M. Mitkova, “Crystallization effects in annealed thin GeS2 films photodiffused with Ag,” Journal of Non–Crystalline Solids, vol. 353, 1454–1459 (2007).

C. Gopalan, M.N. Kozicki, S. Bhagat, S.C. Puthen Thermadam, T.L. Alford and M. Mitkova, “Structure of copper–doped tungsten oxide films for solid–state memory,” Journal of Non–Crystalline Solids, vol. 353, 1844–1848 (2007).

N.E. Gilbert and M.N. Kozicki, “An Embeddable Multilevel–Cell Solid Electrolyte Memory Array,” IEEE Journal of Solid–State Circuits, vol. 42, 1383–1391 (2007).

M. Balakrishnan, M. N. Kozicki, C. Poweleit, S. Bhagat, T. L. Alford, M. Mitkova, “Structural study of Cu photodoped Ge–S glasses,” Journal of Optoelectronics and Advanced Materials, vol. 9, 3241 – 3246 (2007).

C. Schindler, S.C.P. Thermadam, R. Waser, and M.N. Kozicki, “Bipolar and Unipolar Resistive Switching in Cu–Doped SiO2,” IEEE Trans. Electron Devices, vol. 54, 2762 – 2768 (2007).

C. Schindler, M. Weides, M. N. Kozicki, and R. Waser,Low current resistive switching in Cu–SiO2 cells” Appl. Phys. Lett., vol. 92, 122910–1 122910–1 (2008).

S.–S. Je, J. Kim, J.C. Harrison, M.N. Kozicki, and J. Chae, “In situ tuning of omnidirectional microelectromechanical–systems microphones to improve performance fit in hearing aids”, Appl. Phys. Lett., vol. 93, 123501–1 123501–3 (2008).

S.S. Je, J.C. Harrison, M.N. Kozicki, B, Bakkaloglu, S. Kiaei, J. Chae,  “In situ tuning of a MEMS microphone using electrodeposited nanostructures,” J. Micromech. Microeng., vol. 19, 035015, 1–8 (2009).

U. Russo, D. Kamalanathan, D. Ielmini, A.L. Lacaita, and M.N. Kozicki, “Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory,” IEEE Transactions on Electron Devices, Vol. 56, Issue 5, 1040 – 1047 (2009).

D. Kamalanathan, U. Russo, D. Ielmini, and M.N. Kozicki, “Voltage–Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory,” IEEE Electron Device Letters, Vol. 30, Issue 5, 553 – 555 (2009).

INVITED PAPER – N. Derhacobian, S.C.Hollmer, N. Gilbert, M.N. Kozicki, “Power and Energy Perspectives of Nonvolatile Memory Technologies,” Proc. IEEE, vol. 98, 283–298 (2010).

S. Puthen Thermadam, S.K. Bhagat, T.L. Alford, Y. Sakaguchi, M.N. Kozicki and M. Mitkova, “Influence of Cu diffusion conditions on the switching of Cu–SiO2–based resistive memory devices,” Thin Solid Films, vol. 518, 3293–3298 (2010).

S.C. Puthenthermadam, S.K. Bhagat, T.L. Alford, Y. Sakaguchi, M.N. Kozicki and M. Mitkova, “Influence of Cu diffusion conditions on the switching of Cu–SiO2–based resistive memory devices,” Thin Solid Films, vol. 518, 3293–3298 (2011).

INVITED PAPER – S.C. Puthenthermadam, D.K. Schroder and M.N. Kozicki, “Inherent diode isolation in programmable metallization cell resistive memory elements,” Applied Physics A: Materials Science & Processing , vol. 102, 4817–4826 (2011).

INVITED PAPER – D. Kamalanathan, A. Akhavan and M.N. Kozicki, “Low voltage cycling of programmable metallization cell memory devices,” Nanotechnology, vol. 22, doi:10.1088/0957–4484/22/25/254017 (2011).

INVITED REVIEW – I. Valov, R. Waser, J.R. Jameson and M.N. Kozicki, “Electrochemical metallization memories—fundamentals, applications, prospects,” Nanotechnology, vol. 22, doi:10.1088/0957–4484/22/25/254003 (2011).

J.R. Jameson, N. Gilbert, F. Koushan, J. Saenz, J. Wang, S. Hollmer and M.N. Kozicki, , “One–dimensional model of the programming kinetics of conductive–bridge memory cells,” Applied Physics Letters, vol. 99, doi: 10.1063/1.3623485 (2011).

J.R. Jameson, N. Gilbert, F. Koushan, J. Saenz, J. Wang, S. Hollmer, and M.N. Kozicki, “Effects of cooperative ionic motion on programming kinetics of conductive-bridge memory cells,” Appl. Phys., Lett., Vol. 100, DOI: 10.1063/1.3675870 (2012). 

J.R. Jameson, N. Gilbert, F. Koushan, J. Saenz, J. Wang, S. Hollmer, M.N. Kozicki, and N. Derhacobian, “Quantized Conductance in Ag/GeS2/W Conductive-Bridge Memory Cells,” IEEE Electron Device Lett., Vol. 33, 257-259 , DOI: 10.1109/LED.2011.2177803 (2012).

INVITED REVIEW – W. Lu, D.S. Jeong, M.N. Kozicki, R. Waser, R, “Electrochemical metallization cells-blending nanoionics into nanoelectronics?”  MRS Bulletin, Vol. 37, 124-130, DOI: 10.1557/mrs.2012.5 (2012).

Y. Gonzalez-Velo, H.J. Barnaby, A. Chandran, D.R. Oleksy, P. Dandamudi, M.N. Kozicki, K.E. Holbert, M. Mitkova, M. Ailavajhala, and P. Chen, “Effects of Cobalt-60 Gamma-Rays on Ge-Se Chalcogenide Glasses and Ag/Ge-Se Test Structures,” IEEE Trans. Nuc. Sci., Vol. 59, 3093-3100, DOI: 10.1109/ TNS.2012.2224137 (2012).

INVITED PAPER - I. Valov and M.N. Kozicki, “Cation-based resistance change memory,” J. Phys. D-Appl. Phys., vol. 46, art. no.: 074005 (2013).

Y. Gonzalez-Velo, H. J. Barnaby, M. N. Kozicki, P. Dandamudi, A. Chandran, K. E. Holbert, M. Mitkova, and M. Ailavajhala, "Total-Ionizing-Dose Effects on the Resistance Switching Characteristics of Chalcogenide Programmable Metallization Cells," IEEE Transactions on Nuclear Science, vol. 60, 4563-4569 (2013).

M. S. Ailavajhala, T. Nichol, Y. Gonzalez-Velo, C. D. Poweleit, H. J. Barnaby, M. N. Kozicki, D. P. Butt, and M. Mitkova, "Thin Ge-Se films as a sensing material for radiation doses," Phys. Status Solidi B, 1–7 / DOI 10.1002/pssb.201350188 (2013).

P. Dandamudi, M. N. Kozicki, H. J. Barnaby, Y. Gonzalez-Velo, M. Mitkova, K. E. Holbert, et al., "Sensors based on radiation-induced diffusion of silver in Germanium selenide glasses," IEEE Trans. Nucl. Sc, vol. 60, pp. 4257-4264, 2013.

M. S. Ailavajhala, Y. Gonzalez-Velo, C. Poweleit, H. Barnaby, M. N. Kozicki, K. Holbert, et al., "Gamma radiation induced effects in floppy and rigid Ge-containing chalcogenide thin films," J. Appl. Physics, vol. 115, pp. 043502-043502-9, 2014.

M. S. Ailavajhala, Y. Gonzalez-Velo, C. D. Poweleit, H. J. Barnaby, M. N. Kozicki, D. P. Butt, et al., "New functionality of chalcogenide glasses for radiation sensing of nuclear wastes," J. Haz. Mat., vol. 269, pp. 68-73, 2014.

P. Dandamudi, H. J. Barnaby, M. N. Kozicki, Y. Gonzalez-Velo, and K. E. Holbert, "Total Ionizing Dose Tolerance of Ag-Ge40S60 based Programmable Metallization Cells," IEEE  Trans. Nucl. Sci., vol. 61, pp. 1726-1731, 2014.

Y. Gonzalez-Velo, H. J. Barnaby, M. N. Kozicki, C. Gopalan, and K. Holbert, "Total Ionizing Dose Retention Capability of Conductive Bridging Random Access Memory," IEEE Elec. Dev. Lett., IEEE, vol. 35, pp. 205-207, 2014.

R. Fang, Y. Gonzalez-Velo, W. Chen, K.E. Holbert,, M.N. Kozicki, H. Barnaby, and S.M. Yu, “Total ionizing dose effect of gamma-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory,” Appl. Phys. Lett., vol. 104, art. no.183507 (2014).

M.S. Ailavajhala, T. Nichol, Y. Gonzalez-Velo, C.D. Poweleit, H.J. Barnaby, M.N. Kozicki, D.P. Butt, and M. Mitkova, “Thin Ge-Se films as a sensing material for radiation doses,” Phys. Stat. Sol., vol. 251, 1347-1353 (2014).

D. Mahalanabis, H.J. Barnaby, Y. Gonzalez-Velo, M.N. Kozicki, S. Vrudhula, and P. Dandamudi, “Incremental resistance programming of programmable metallization cells for use as electronic synapses,” Solid State Elec., vol. 100, 39-44, DOI: 10.1016/j.sse.2014.07.002 (2014).

M. Saremi, H.J. Barnaby, A. Edwards, M.N. Kozicki, “Analytical Relationship between Anion Formation and Carrier-Trap Statistics in Chalcogenide Glass Films,” ECS Electrochemistry Letters, vol. 4, H29-H31 (2015).

S. Rajabi, M. Saremi, H.J. Barnaby, A. Edwards, M.N. Kozicki, M. Mitkova, D. Mahalanabis, Y. Gonzalez-Velo, A. Mahmud, “Static impedance behavior of programmable metallization cells,” Solid-State Electronics, vol. 106, 27–33 (2015).

D. Mahalanabis, V. Bharadwaj, H.J. Barnaby, S. Vrudhula, M.N. Kozicki, “A Nonvolatile Sense Amplifier Flip-Flop Using Programmable Metallization Cells,” IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 5, 205-213 (2015).

A.H. Edwards, H.J. Barnaby, K.A. Campbell, M.N. Kozicki, W. Liu, and M.J. Marinella, “Reconfigurable Memristive Device Technologies,” Proc. IEEE, vol.103, 1004-1033 (2015).

J. Orava, M. N. Kozicki, S. N. Yannopoulos, and A. L. Greer, “Reversible migration of silver on memorized pathways in Ag-Ge40S60 films,” AIP Advances, vol. 5, 077134 (2015).

 

National/international conference proceedings papers

M.N. Kozicki and J.M. Robertson, “Electron Beam Annealing of Co and Cr Implanted Polycrystalline Silicon”, Institute of Physics Conf. Ser. No. 67, 137–142 (1983).

M.N. Kozicki, “Formation and Oxidation of Implanted Cobalt Silicides on Polycrystalline–silicon”, Proc. IEEE Fifth VLSI Multilevel Interconnection Conference, 198–204 (1988).

M.N. Kozicki, V. Ramesh and D. Williams, “Carbon Enhanced Vapor Etching”, Proc. Interface ‘88, 283–299 (1988).

A.E. Owen, P.J.S. Ewen, A. Zakery, M.N. Kozicki and Y. Khawaja, “Metal–Chalcogenide Photoresists for High Resolution Lithography and Sub–micron Structures” in Nanostructure Physics and Fabrication (M.A. Reid and W.P. Kirk, Eds.), 447–451, Academic Press, San Diego, 1989.

P. Rastogi, M.N. Kozicki, T. Patel and G.W. Sheets, “Expert System Control of Dielectric Formation”, Proceedings of the Fourth Symposium on Automated Integrated Circuits Manufacturing, The Electrochemical Society, vol. 89–2, 223–234 (1989).

D. Henscheid, M.N. Kozicki, I. Zwiebel, R.J. Graham, G.W. Sheets and E.G. Chang, “Dielectric Formation by Rapid Thermal Nitridation”, Proceedings of the 1988 Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, The Electrochemical Society, vol. 89–7, 235–246 (1989).

M.N. Kozicki and P.J. Robinson, “Education in Microelectronics: Issues of Safety and Practices”, Proceedings of the Sixth International Conference on Technology and Education, 555–558 (1989).

M.N. Kozicki, Y. Khawaja, A.E. Owen, P.J.S. Ewen and A. Zakery, “As–S/Ag Systems for Integrated Optics”, Proceedings of the Sixth VLSI Multilevel Interconnection Conference, 251–257 (1989).

D.K. Ferry, M.N. Kozicki and G.B. Raupp, “Some Fundamental Issues on Metallization in VLSI”, Proceedings of the Conference on Metallization: Performance and Reliability Issues in VLSI (G.S. Gildenblat and G.P. Schwartz, Eds.), SPIE Vol. 1596, 2–11 (1991).

F. Golshani, M.N. Kozicki and P. Rastogi, “Real–time Process Management: The Design and Development of EXPRO”, Proc. Fifth International Symposium on Artificial Intelligence, Cancun, Mexico, 46–55 (1992).

M.N. Kozicki, “Disabled Employees in Controlled Environments”, Proceedings of the 8th International Conference on Advanced Technologies and Practices for Contamination Control, Philadelphia, 553–558 (1994).

K. Stoddart, P. Crouch, M. Kozicki and K. Tsakalis, “Application of Feed–Forward and Adaptive Feedback Control to Semiconductor Device Manufacture”, Proceedings of the American Control Conference, Baltimore, 892– 896 (1994).

T.K. Whidden , J. Allgair, J.M. Ryan, M.N. Kozicki, and D.K. Ferry, “Positionally Fixed Lewis Bases as Catalysts for Enhanced Rate HF Vapor Etching: Applications in Nanolithographic Processing”, in Proceedings of the 1994 Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, The Electrochemical Society, vol. 94–16, 218–226 (1994).

M.N. Kozicki and J. Rice, “A Holistic Approach to Cleanroom Cleaning”, Proceedings of the 9th International Conference on Advanced Technologies and Practices for Contamination Control, Baltimore, 427–432 (1995).

M.N. Kozicki, “Disabled Employees in Controlled Environments – An Update”, Proceedings of the 9th International Conference on Advanced Technologies and Practices for Contamination Control, Baltimore, 444–450 (1995).

M.N. Kozicki, “Wheelchairs in Controlled Environments”, Proceedings of RESNA ‘95, Vancouver, BC (1995).

J.M. Ryan, J. Allgair, T.K. Whidden, M.N. Kozicki and D.K. Ferry, “Vapor Etching of Beam–Deposited Carbon on Silicon Dioxide Films” in Quantum Transport in Ultrasmall Devices (D.K. Ferry et al., Eds.), 437–440, Plenum Press, New York, 1995.

M.N. Kozicki and J. Rice, “Holistic Cleanroom Training – Structure and Benefits”, Proceedings of the 11th International Conference on Advanced Technologies and Practices for Contamination Control, Boston, MA, Tutorial 1–36 (1996).

M.N. Kozicki and J. Rice, “Cleanroom Training – Structure and Effectiveness”, Proceedings of the 1996 Conference on Advanced Microcontamination Control and Ultrapure Manufacturing, Santa Clara, CA, Tutorial 104 (1996).

INVITED – M.N. Kozicki and T.K. Whidden, “Nanoscale Pattern Definition Using Silicon Dioxide”, Silicon Nitride and Silicon Dioxide Thin Insulating Films IV, M.J. Deen, W.D. Brown, K.B. Sundaram, and S.I. Raider, Eds., The Electrochemical Society, 1997.

M.N. Kozicki, S.–J. Yang, T. Kim, and B. Kardynal, "A Novel Nanoscale Resist Using 10–undecanoic Acid Monolayers on Silicon Dioxide",  Fourth International Symposium on New Phenomena in Mesoscopic Structures,166–168 (1998).

B. Swaroop, W.C. West, G. Martinez, M.N. Kozicki, and L.A. Akers, “Programmable Current Mode Hebbian Learning Neural Network Using Programmable Metallization Cell,” Proceedings of the International Symposium on Circuits and Systems, vol. 3, 33–36 (1998).

M.N. Kozicki, M. Yun, L. Hilt, and A. Singh, “Applications of Programmable Resistance Changes in Metal–doped Chalcogenides”, Proceedings of the 1999 Symposium on Solid State Ionic Devices, Editors – E.D. Wachsman et al., The Electrochemical Society, Inc., 1 – 12 (1999).

INVITED – M.N. Kozicki and S.–J. Yang, “Novel Uses of Silicon Dioxide in Deep–Submicron Device Fabrication”, Proceedings of the Fifth International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, Editors – K.B. Sundaram and E. Garfunkel, The Electrochemical Society, Inc., 1 – 15 (1999).

M.N. Kozicki, W.C. West, B. Kardynal, L. Hilt, M. Yun, and A. Singh, “The Programmable Metallization Cell – Potential Applications in Critical Electronic Systems”, Proceedings of the International Conference on Integrated Nano/Microtechnology for Space Applications, The Institute for Advanced Interdisciplinary Research, ISBN 0–9661324–4–0 (1999).

S. Goodnick, J.P. Bird, D.K. Ferry, A. Gunther, M.N. Kozicki, M. Khoury, M.J. Rack, T. Thornton, and D. Vasileska, “Transport in Split Gate MOS Quantum Dot Structures”, Proceedings of the 9th Great Lakes Symposium on VLSI, IEEE Press, 394 – 396 (1999).

M.N. Kozicki and M. Mitkova, “Silver incorporation in thin films of selenium rich Ge–Se glasses”, Proceedings of the XIX International Congress on Glass, Society for Glass Technology, 226–227 (2001).

R. Symanczyk, M. Balakrishnan, C. Gopalan, T. Happ, M. Kozicki, M. Kund, T. Mikolajick, M. Mitkova, M. Park, C Pinnow, J. Robertson, and K. Ufert, “Electrical Characterization of Solid State Ionic Memory Elements,” Proceedings of the Non–Volatile Memory Technology Symposium, San Diego, CA, 17–1 (2003).

P.Boolchand, F.Wang, U.Vempati, M. Mitkova and M. Kozicki, Bimodal Tgs and macroscopic phase separation in Ag–Ge–S bulk glasses, Bull. Amer. Phys. Soc., 49, 826 (2004).

BEST PAPER AWARD M.N. Kozicki, C. Gopalan, M. Balakrishnan, M. Park, and M. Mitkova, “Non–Volatile Memory Based on Solid Electrolytes,” Proceedings of the 2004 Non–Volatile Memory Technology Symposium, 10–17 (2004).

S. Enderling, C.L. Brown, III, M. Balakrishnan, J. Hedley, J.T.M. Stevenson, S. Bond, C.C. Dunare, A.J. Harris, J.S. Burdess, M. Mitkova, M.N. Kozicki and A.J. Walton,  “Tuning Scheme With MEMS Surface Micromachined Resonators,” Technical Digest of the 18th IEEE Conference on Micro Electro Mechanical Systems (MEMS 2005), 159–162 (2005).

M.N. Kozicki, P. Maroufkhani and M. Mitkova, “Valving in Microchannels via Electrodeposition on Solid Electrolytes,” Technical Proceedings of the 2005 NSTI Nanotechnology Conference, Vol. 1, Chapter 11, 716–719 (2005).

S. Enderling, C. L. Brown III, S. Smith, M.H. Dicks, J.T.M. Stevenson, A.W.S. Ross, M. Mitkova, M.N. Kozicki and A.J. Walton, “Suspended Greek Cross Test Structures for Measuring the Sheet Resistance of Non–Standard Cleanroom Materials,” Proceedings of the International Conference on Microelectronic Test Structures (ICMTS 2005), 1–4 (2005).

M.N. Kozicki, C.L. Brown III, M. Mitkova, S. Enderling, J. Hedley and A.J. Walton, “Application of Mass Transport in Solid Electrolyte Films in Tunable Microelectromechanical Resonators,” Technical Proceedings of the 2005 NSTI Nanotechnology Conference, Vol. 3, Chapter 8, 447–450 (2005).

N.E. Gilbert, C. Gopalan, and M.N. Kozicki, “A Macro Model of Programmable Metallization Cell Devices,” Proceedings of the 1st International Conference on Memory Technology and Design, 177–180 (2005).

M.N. Kozicki, C. Gopalan, M. Balakrishnan, and M. Mitkova, “A Low Power Non–Volatile Switching Element Based on Copper–Tungsten Oxide Solid Electrolyte,” IEEE Silicon Nanoelectronics Workshop, 34–35 (2005).

M.N. Kozicki, M. Balakrishnan, C. Gopalan, C. Ratnakumar, and M. Mitkova, “Programmable Metallization Cell Memory Based on Ag–Ge–S and Cu–Ge–S Solid Electrolytes,” IEEE Non–Volatile Memory Technology Symposium (NVMTS), D5, 1–7 (2005).

INVITED – M.N. Kozicki, “Resistance–change devices based on solid electrolytes,” Proceedings of the European Symposium on Phase Change and Ovonic Science (E*PCOS), 119–126 (2006).

M. Balakrishnan, S.C.P. Thermadam, M. Mitkova, and M.N. Kozicki, “A Low Power Non–Volatile Memory Element Based on Copper in Deposited Silicon Oxide,” Proceedings of the 7th Non–Volatile Memory Technology Symposium (NVMTS), 104–110 (2006).

C. Ratnakumar, M. Mitkova, and M.N. Kozicki, “Electrodeposit Formation in Solid Electrolytes,” Proceedings of the 7th Non–Volatile Memory Technology Symposium (NVMTS), 111–115 (2006).

INVITED M.N.Kozicki, “Memory Devices Based on Solid Electrolytes,” in Materials and Processes for Nonvolatile Memories, edited by T. Li, Y. Fujisaki, J. Slaughter, D. Tsoukalas, Mater. Res. Soc. Symp. Proc., vol. 997, I5.1, 2007.

C. Schindler, M. Meier, R. Waser, M.N. Kozicki, “Resistive switching in Ag–Ge–Se with extremely low write currents,” Proceedings of the 8th Non–Volatile Memory Technology Symposium, 82–85 (2007).

S.R. Baliga, S.C. Puthen Thermadam, D. Kamalanathan, D.R. Allee, and M.N. Kozicki, “Solid Electrolyte Memory for Flexible Electronics,” 8th Non–Volatile Memory Technology Symposium, Albuquerque, NM, November 10–13, 2007.

D. Kamalanathan, S.C. Puthen Thermadam, and M.N. Kozicki, “ON State Stability of Programmable Metalization Cell (PMC) Memory,” 8th Non–Volatile Memory Technology Symposium, Albuquerque, NM, November 10–13, 2007.

J. A. Nessel, R. Q. Lee, C. H. Mueller, M. N. Kozicki, M. Ren, J. Morse, “A Novel Nanoionics–based Switch for Microwave Applications,” IEEE MTT–S International Microwave Symposium 2008 (IMS2008), 1051–1054 (2008).

C. Schindler, M. Weides, M.N. Kozicki, and R. Waser, “Ultra low current resistive memory based on Cu–SiO2,IEEE Silicon Nanoelectronics Workshop, 1–2 (2008).

J.M. Robertson, M.N. Kozicki, and S. Petrovic, “Assessing the True Cost of Delivering Nano–hype”, Proceedings of the American Society for Engineering Education (ASEE) Annual Conference, Pittsburgh, PA, June, 1–12 (2008).

INVITED M.N. Kozicki, “Ionic Memory in the Terabit Regime”, Proceedings of the 3rd International Symposium on Tera–bit–level Non–volatile Memories, 1–2 (2008).

INVITED M.N. Kozicki, “Ionic Memory – Materials and Device Characteristics,” Proceedings of the 9th International Conference on Solid–State and Integrated–Circuit Technology (ICSICT), 1–4 (2008).

S.–S. Je, J. Kim, M.N. Kozicki, and J. Chae, “A Directional Capacitive MEMS Microphone Using Nano–Electrodeposits”, Technical Digest of the 22nd IEEE Conference on Micro Electro Mechanical Systems, 96–99 (2009).

S.–S. Je, J. Kim, M.N. Kozicki, J. Chae, “Nano–Electrodeposits of MEMS Directional Microphones for Hearing Aid Optimization,” Nanotechnology 2009, Vol. 1, 436–439 (2009).

Y. Yang, X. Zhang, M.N. Kozicki, J. Chae, “A Solid Electrolyte Valve for Micro/Nano–fluidics,” Nanotechnology 2009, Vol. 3, 525–528 (2009).

INVITED M.N. Kozicki, “Ionic Materials and Devices in Memory and Storage,” Semicon Korea Technical Digest, SEMI, S2 13 – 16, (2010).

INVITED M.N. Kozicki, “Cation–based resistive memory,” Proc. IEEE 4th International Nanoelectronics Conference (INEC 2011), 250–252 (2011).

INVITED M.N Kozicki, P. Dandamudi, H.J. Barnaby, and Y. Gonzalez-Velo, “Programmable Metallization Cells in Memory and Switching Applications,” ECS Transactions, vol. 58(5), 47-52 (2013).

H. Barnaby, A. Edwards, D. Oleksy, and M. Kozicki, "Finite element modeling of Ag transport and reactions in chalcogenide glass resistive memory," Proceedings of the 2013 IEEE Aerospace Conference, 1-10 (2013).

M. Mitkova, M.S. Ailavajhala, D. P. Butt, Hugh Barnaby, Y. Gonzalez Velo, C.D. Poweleit and M.N. Kozicki “New Functionality of Chalcogenide Glasses for Radiation Sensing of Nuclear Wastes” Proceedings of the 3rd International Conference on Research Frontiers in Chalcogen Cycle Science & Technology, UNESCO, 75-82 (2013).

INVITED J.R. Jameson, P. Blanchard, C. Cheng, J. Dinh, A. Gallo, V. Gopalakrishnan, , B. Guichet, S. Hsu, D. Kamalanathan, D. Kim, F. Koushan, M. Kwan, K. Law, D. Lewis, Y. Ma, V. McCaffrey, S. Park, S. Puthenthermadam, E. Runnion, J. Sanchez, J. Shields, K. Tsai, A. Tysdal, D. Wang, R. Williams, M.N. Kozicki, J. Wang, V. Gopinath, S. Hollmer, M. Van Buskirk., “Conductive-bridge memory (CBRAM) with excellent high-temperature retention,” IEEE International Electron Devices Meeting (IEDM), 10.1109/IEDM.2013.6724721, 30.1.1 - 30.1.4 (2013).

Y. Gonzalez-Velo, H. J. Barnaby, M. N. Kozicki, and K. Holbert, "Total-Ionizing-Dose Effects on the Impedance of Silver doped Chalcogenide Programmable Metallization Cells," Proceedings of the IEEE Aerospace Conference, pp. 1-7, 2014.

 

National/international conference abstracts (not included in proceedings)

M.N. Kozicki and J.M. Robertson, “CoSi2 Formation by Ion–Implantation”, Europhysics Conference Abstracts F7, 191–192 (1983).

A.G. Buttar, M.N. Kozicki and J.M. Robertson, “Temperature Modelling for Transient Annealing”, Europhysics Conference Abstracts F7, 161–162 (1983).

M.N. Kozicki, J.M. Robertson and R. Holwill, “Cobalt Polycide – Gate Material for VSLI”, IEE London, Digest No. 1983/90, 11/1–11/4 (1983).

M.N. Kozicki, “CMOS in Perspective”, CREST School, University of Edinburgh, 1984.

M.N. Kozicki, “Silicide Formation by Direct Metal Implantation”, Electrochemical Society Fall Meeting Extended Abstracts, 968–969 (1987).

G. Bernstein, W.P. Liu, Y. Khawaja, M.N. Kozicki, D.K. Ferry and L. Blum, “High–resolution Electron–beam Lithography in Negative Organic and Inorganic Resists”, 32nd International Symposium on Electron, Ion and Photon Beams, W–5, 1988.

D. Henscheid, M.N. Kozicki, G.W. Sheets, R.J. Graham, M. Mughal and I. Zwiebel, “Rapid Thermal Nitridation of Thin Silicon Dioxide Films”, Electronic Materials Conference, Q5, 1988.

G.W. Sheets and M.N. Kozicki, “Source/Drain Formation Using Spin–on Dopants and Subsequent Rapid Thermal Diffusion”, Electrochemical Society Fall Meeting Extended Abstracts, 687–688 (1988).

M.N. Kozicki, Y. Khawaja, J.L. Edwards, B. Qurashi, G. Bernstein and A.E. Owen, “Alternative Materials and Processes for Integrated Optics”, Electrochemical Society Fall Meeting Extended Abstracts, 890–891 (1988).

D. Henscheid, I. Zwiebel, M. Kozicki and R. Graham, “Rapid Thermal Nitridation of Thin SiO2 Films”, Abstracts of the AIChE Fall Meeting, 38C, 1988.

M.N. Kozicki, "The Application of Silicon Integrated Circuit Technology to Sensor Fabrication", Symposium on New Horizons in Chemical Sensors, 1989.

M.N. Kozicki, S.W. Hsia, A.E. Owen and P.J.S. Ewen, “PASS – A Chalcogenide–based Lithography Scheme for I.C. Fabrication”, Fourteenth International Conference on Amorphous Semiconductors, We–C1/1, 1991.

M.N. Kozicki, S. Balster, A. Jenkins, M. Polacca and V. Burrows, “Carbon and Sulfur Enhanced Vapor Etching of SiO2 Films”, Abstracts of the 183rd Meeting of the Electrochemical Society, Interface, Vol. 2, No. 2, 63 (1993).

J.M. Ryan, J. Allgair, M.N. Kozicki and D.K. Ferry, “Direct Patterning of SiO2 by Carbon Enhanced Vapor Etching”, Engineering Foundation Conference “Surfaces and Interfaces in Mesoscopic Systems”, 37, (1994).

M.N. Kozicki, “Physical Aids for Controlled Environments”, Abstracts of the Annual Fall Meeting of the Biomedical Engineering Society, RE–6 (1994).

M.N. Kozicki, R.W. Roberson, T.K. Whidden and S.E. Kersey, “Directed Growth of Uromyces Hyphae on Integrated Circuit Substrates”, Abstracts of the 41st National Symposium of the American Vacuum Society, BINS–WeM7 (1994).

T.K. Whidden, J. Allgair, A. Jenkins–Gray and M.N. Kozicki, “Nanoscale STM Patterning of Silicon Dioxide Thin Films by Catalyzed HF Vapor Etching”, Abstracts of the 41st National Symposium of the American Vacuum Society, NS–ThP15 (1994).

T.K. Whidden, J. Allgair, A. Jenkins–Gray, M.N. Kozicki, and D.K. Ferry, “Nanoscale Lithography with Electron Exposure of SiO2 Resists”, International Workshop on Mesoscopic Physics and Electronics, B09 (1995).

M.N. Kozicki, J. Allgair, and T.K. Whidden, “Nanostructure Fabrication by STM Exposure of SiO2 Resist”, 39th International Conference on Electron, Ion and Photon Beams, C50 (1995).

J. Allgair, A. Jenkins–Gray, M. Khoury, D.K. Ferry, M.N. Kozicki, and T.K. Whidden, “Nanoscale Patterning of SiO2 by Electron–beam Exposure of Monolayer Resists”, Abstracts of the 37th Electronic Materials Conference, J10 (1995).

R.W. Roberson, M.N. Kozicki, T.K. Whidden, and S.E. Kersey, “Can Fungal Hyphae Serve as Electrical Connections on Integrated Circuit Substrates?”, Newsletter of the Mycological Society of America, Vol. 64, p35 (1995).

J. Allgair, M. Khoury, M.J. Rack, T.K. Whidden, M.N. Kozicki, and D.K. Ferry “Formation of Nanoscale Cobalt Silicide Wires Using E–beam and STM Lithography”, Abstracts of the 42nd National Symposium of the American Vacuum Society, NS+EM–TuM5 (1995).

M. N. Kozicki, J. Allgair, D.K. Ferry, and T.K. Whidden, “The Use of Electron–beam Exposure and Chemically Enhanced Vapor Etching of SiO2 for Nanoscale Fabrication”, Third International Symposium on New Phenomena in Mesoscopic Structures, Maui, Hawaii, Japan Society for the Promotion of Science, P06, 1995.

M. Pan, M. Yun, M.N. Kozicki and T.K. Whidden, “Self–assembled Monolayer Resists and Nanoscale Lithography of Silicon Dioxide Thin Films by Chemically Enhanced Vapor Etching (CEVE), Third International Symposium on Nanostructures and Mesoscopic Systems, Santa Fe, New Mexico, TuPp4, 1996.

S.J. Yang, M.N. Kozicki, and T.K. Whidden, “Proximal Probe Lithography with Self–Assembled Monolayers and Chemically Enhanced Vapor Etching”, Silicon Nanoelectronics Workshop, Honolulu, Hawaii, 1996.

A.H.M. Kamal, J. Luetzen, M.N. Kozicki, and D.K. Ferry, “The Fabrication of Nanoscale CoSi2 Conductors by Electron–Beam Lithography”, Silicon Nanoelectronics Workshop, Honolulu, Hawaii, 1996.

T. K. Whidden, M. Pan, and M.N. Kozicki, “Nanolithography Using Self–Assembled Monolayers of Undecylenic Acid on Silicon Dioxide: Electron Beam Patterning and Pattern Developemnt by CEVE”, 38th Electronic Materials Conference, Santa Barbara, 1996.

M.N. Kozicki, R.W. Roberson, H.A. McNally, S.E. Kersey, and T.K. Whidden, “Electrical Characterization of Uromyces Germ Tubes Grown on Integrated Circuit Substrates”, BI–TuM5, 43rd National Symposium of the American Vacuum Society, Philadelphia, PA, 1996.

M.N. Kozicki, A.H.M. Kamal, J. Luetzen and D.K. Ferry, “CoSi2/Si Structures for Nanodevices and Memories”, 1996 Advanced Heterostructure Workshop, Hawaii, 1996.

J. Luetzen, A.H.M. Kamal, B.A. Sanborn, M.V. Sidorov, M.N. Kozicki, D.J. Smith and D.K. Ferry, “Single Electron Memory Effects in Nanocrystalline Silicon at Room Temperature, Silicon Nanoelectronics Workshop, Kyoto, Japan, 1997.

INVITED – M.N. Kozicki, B. Kardynal, S.–J. Yang, T. Kim, M.V. Sidorov, and D.J. Smith, "Application of Chemically Enhanced Vapor Etching in the Fabrication of Nanostructures", Tu2.1, Second International Workshop on Surfaces and Interfaces of Mesoscopic Devices, Kanapali, Hawaii, 1997.

J. Luetzen, A.H.M. Kamal, M.N. Kozicki, D.K. Ferry, M.V. Sidorov, and D.J. Smith, "Characterization of Ultrathin Nanocrystalline Silicon Films Formed by Annealing Amorphous Silicon", Abstracts of the 1998 IEEE Silicon Nanoelectronics Workshop, Honolulu, HI, 31–32 (1998).

J. Luetzen, A.H.M. Kamal, M.N. Kozicki, D.K. Ferry, "CMOS Technology Compatible Fabrication of Single Electron Device", Abstracts of the 1998 IEEE Silicon Nanoelectronics Workshop, Honolulu, HI, 55–56 (1998).

M.N. Kozicki and D.K. Ferry, "Ultra–thin Silicide Layers Formed by Rapid Thermal Processing of Cobalt on Silicon", Advanced Heterostructure Workshop, Hawaii, HI (1998).

M.N. Kozicki and S.–J. Yang, “Electron–Beam Exposure of Self–Assembled Monolayers of 10–Undecanoic Acid – Effects and Applications”, Surfaces and Interfaces of Mesoscopic Devices, Kaanapali, HI, December 5 – 10, 1999.

M.N. Kozicki, M. Yun, S.–J. Yang, J.P. Aberouette, and J.P. Bird,  “Nanoscale Effects in Devices Based on Chalcogenide Solid Solutions”, Surfaces and Interfaces of Mesoscopic Devices, Kaanapali, HI, December 5 – 10, 1999.

B.W. Axelrod, L. de la Garza, M.N. Kozicki, and J.D. Gust, “Molecular electronics devices utilizing tetra–tolyl–porphyrin and spiropyran monolayers”, Extended Abstracts of the 2000 Silicon Nanoelectronics Workshop, Honolulu, HI, 55–56 June, 2000.

S.–J. Yang and M.N. Kozicki, “The relative roles of self–assembled organic monolayers and vacuum contamination in the HF vapor rate enhancement of SiO2”, Extended Abstracts of the 198th Meeting of the Electrochemical Society, Phoenix, AZ, 823, October, 2000.

M.N. Kozicki, "Spiropyran monolayers on silicon", presented at the Advanced Heterostructures Workshop, Kona, HI, December, 2000.

M. Mitkova and M.N. Kozicki, “Silver incorporation in Ge–Se glasses used in Programmable Metallization Cell devices”, 19th International Conference on Amorphous and Microcrystalline Semiconductors, Nice, France, TuC3/4, August 2001.

J. Yang, L. de la Garza, T. J. Thornton, M.N. Kozicki, and J.D. Gust, “Molecular control of the drain current in a buried channel MOSFET”, 3rd Motorola Workshop on Computational Materials and Electronics, Tempe, AZ, November 2001.

J. Yang, T. J. Thornton, S.M. Goodnick, M.N. Kozicki, and J. Lyding, “Buried channel silicon–on–insulator MOSFETs for hot electron spectroscopy”, 12th International Conference on Non–Equilbrium Carrier Dynamics in Semiconductors (HCIS12), Santa Fe, NM, August 2001.

J. Yang, T.J. Thornton, M.N. Kozicki, L. de la Garza, and J.D. Gust, “Molecular control of the threshold voltage of an NMOS inversion layer”, Fifth International Symposium on New Phenomena in Mesoscopic Structures, Waikoloa, HI, G5, December 2001.

M.N. Kozicki, M. Mitkova, J. Zhu, and M. Park, “Nanoscale phase separation in Ag–Ge–Se glasses”, Fifth International Symposium on New Phenomena in Mesoscopic Structures, Waikoloa, HI, H4, December 2001.

L. de la Garza, J. Yang, B. Takalupali, T. Thornton, D. Gust, M. Kozicki,  “Controlling the threshold voltage of a hybrid molecular MOSFET using carboxylic acids,” American Physical Society Meeting, Indianapolis, IN, March 2002.

M. Mitkova, M.N. Kozicki, J. Zhu, M. Par,k “Can silver in chalcogenide glasses change our vision of microelectronics?,” American Physical Society Meeting, Indianapolis, IN, March 2002.

G.M. Laws, J. Yang, T.J. Thornton, M. Kozicki, L. de la Garza, D. Gust, “Molecular control of a MOSFET,” ICSNN–02 Conference, Toulouse, France, July 2002.

M.N. Kozicki and M. Mitkova,  “Local structure resulting after photo and thermal diffusion of Ag in Ge–Se thin films,” Local and Nanoscale Structure in Complex Systems, Santa Fe, NM, January 2002.

M.N. Kozicki, M. Mitkova, J. Zhu, M. Park, and C. Gopalan, “Can solid state electrochemistry eliminate the memory scaling quandary?” Extended Abstracts of the 2002 IEEE Silicon Nanoelectronics Workshop, Honolulu, HI, June 2002.

INVITED – M.N. Kozicki and M. Mitkova, Nanostructural aspects of silver doped chalcogenides – why Programmable Metallization Cell devices work the way they do,”12th International School on Condensed Matter Physics, Varna, Bulgaria, September, 2002.

M. Mitkova, M.N. Kozicki, and Janmichael Aberouette, “Silver Containing Chalcogenide Glasses – a Medium for Electrochemically–based Devices,” XIIIth International Symposium on Non–Oxide Glasses and Optical Glasses, Pardubice, Czech Republic, September 2002.

M.N. Kozicki, P. Maroufkhani, and M. Mitkova, “Microfluidic control systems for biochips,” BioDevice Interface Science and Technology Workshop, Scottsdale, AZ, September 2002.

M. N. Kozicki, M. Mitkova, J. Zhu , M. Park, C. Gopalan, and M. Balakrishnan, “Data Storage Using Nanostructured Solid Electrolytes,” NanoTech 2003, San Francisco, CA, February 2003.

M. N. Kozicki, M. Mitkova, and J.P. Aberouette, “Nanostructure of Solid Electrolytes and Surface Electrodeposits,” Fourth International Symposium on Nanostructures and Mesoscopic Systems (NanoMES 4), Tempe, AZ, February 2003.

P.S. Chakraborty, M.R. McCartney, J. Li, C. Gopalan, U. Singisetti, S. M. Goodnick, T.J. Thornton, M. N. Kozicki, “Electron Holographic Characterization of Nanoscale Charge Distributions for Ultra Shallow PN Junctions in Si,” Fourth International Symposium on Nanostructures and Mesoscopic Systems (NanoMES 4), Tempe, AZ, February 2003.

M. I. Mitkova, M. N. Kozicki, H. C. Kim, T. L. Alford, “Local Structure Resulting from Photo– and Thermal Diffusion of Ag in  Ge–Se Thin Films,” ICAMS 20, Campos do Jordao, Brazil, August 2003.

M.N. Kozicki, M. Mitkova, M. Park, M. Balakrishnan, and C. Gopalan, “Information Storage Using Nanoscale Electrodeposition of Metal in Solid Electrolytes,” Sixth International Conference on New Phenomena in Mesoscopic Systems/Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, HI, December 2003.

M.N. Kozicki, P. Maroufkhani, and M. Mitkova, “Flow Regulation in Microchannels via Electrical Alteration of Surface Properties,” Sixth International Conference on New Phenomena in Mesoscopic Systems/Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, Maui, HI, December 2003.

M.N. Kozicki, M. Park, and M. Mitkova, “Nanoscale Memory Elements Based on Solid–State Electrolytes,” 2004 IEEE Silicon Nanoelectronics Workshop, Honolulu, HI, June 2004.

M. Balakrishnan, M.N. Kozicki, C. Gopalan, and M. Mitkova, “Germanium Sulfide–Based Solid Electrolytes for Non–Volatile Memory,” 63rd IEEE Device Research Conference, Santa Barbara, CA, June 20–22, 2005.

INVITED – M.N.Kozicki, “Terabit Memories Are Made of This,” IEEE Symposium on VLSI Circuits, Kyoto, Japan, June 16–18, 2005.

M.N. Kozicki and M. Mitkova, “Mass Transport in Chalcogenide Electrolyte Films – Materials and Applications,” 17th University Conference on Glass Science – New Functionality in Glasses, State College, PA. June 26–30, 2005.

INVITED – M.N. Kozicki, “Highly Scalable Non–Volatile Memory Based on Solid Electrolytes,” Information Storage Industry Consortium (INSIC) Symposium on Alternative Storage Technologies, Monterey, CA, July 19, 2005.

KEYNOTE – M.N. Kozicki, “Nanostructured Solid Electrolytes for Non–Volatile Memory,” Euromat 2005, Prague, Czech Republic, September 5–8, 2005.

M. Mitkova, M. N. Kozicki, H. C. Kim and T. L. Alford, “Crystallization Effects In Annealed Thin Ge–Se Films Photodiffused With Ag, 21st International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 21), Lisbon, Portugal, September 4–9, 2005.

INVITED – M.N. Kozicki, “Atoms to go… Applications of Programmable Metallization Cell Technology From Memory To Microfluidics,” SEMI/NBA Nanoforum, Chicago, IL, November 1–3, 2005.

INVITED – M.N. Kozicki, “Highly scalable resistance–change memory using solid electrolytes,” IEEE International Solid State Circuits Conference (ISSCC), San Francisco, CA, February 5–9, 2006.

INVITED – M.N. Kozicki, “Nanostructured solid electrolytes and the future of memory,” Emerging Nanotechnology Trends – Opportunities and Challenges, 1st Annual Arizona Nanotechnology Symposium, Tempe, AZ, March 16, 2006.

INVITED – M.N. Kozicki, “Fully Scalable Non–Volatile Memory Based on Solid Electrolytes,” Workshop on Performance and Scaling of Non–Volatile Memory Materials, IBM Almaden Research Center, San Jose, CA, April 14, 2006.

INVITED – M.N. Kozicki, “A Review of Solid Electrolyte Memory,” International Symposium on Integrated Ferroelectrics, Honolulu, HI, April 23–27, 2006.

M. Mitkova and M.N. Kozicki, “New structural details on Ag–photodoped chalcogenide glasses used in non–volatile memory,” International Symposium on Non–Oxide and Optical Glasses, Bangalore, India, April 10–14, 2006.

M. Mitkova and M.N. Kozicki, “Structure of silver or copper doped WO3 grown on tungsten for solid state memory,” 10th International Conference on the Structure of Non–Crystalline Materials (NCM10), Prague, Czech Republic, September 18–22, 2006.

M. Mitkova and M.N. Kozicki, “Metal doped chalcogenide glasses for programmable metallization memory application – formation and characterization,” 7th International Conference of Solid State Chemistry (SSC7), Pardubice, Czech Republic, September 18–22, 2006.

INVITED – M.N. Kozicki, Programmable Metallization Cell: From Academic Research to Market Place,” Nano and Giga Challenges in Electronics and Photonics, Phoenix, AZ, March 12–16, 2007.

INVITED – M.N. Kozicki, “Highly Scalable Resistance Change Memory,” Fifty–First International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, Denver, CO, May 29 – June 1, 2007.

M. Mitkova and M.N. Kozicki, “Solid electrolytes based on tetrahedrally coordinated chalcogenide glasses for programmable metallization cell,” 8th Non–Volatile Memory Technology Symposium, Albuquerque, NM, November 10–13, 2007.

INVITED – M.N. Kozicki, “Solid electrolyte devices for memory and storage,” New Non–Volatile Memory Workshop, ITRI, Hsinchu, Taiwan, November 19–20, 2007.

S. R. Baliga, D. Kamalanathan, M. Ren, S. Thermadam and M. Kozicki, “Micro–scale PMC Memory Circuits on Flexible Substrates,” 213th Meeting of the Electrochemical Society, Phoenix, AZ, May 18–22, 2008.

D. Kamalanathan, T. Alford, S. R. Baliga, S. Puthen Thermadam, and M. Kozicki, “Characterization of Failure Mechanisms in Programmable Metallization Cell Devices under Constant Current Stress,” 213th Meeting of the Electrochemical Society, Phoenix, AZ, May 18–22, 2008.

M. Ren, J. Morse, J. Nessel, and M. Kozicki “Programmable Metallization Cell Elements for Microwave Switching Applications,” 213th Meeting of the Electrochemical Society, Phoenix, AZ, May 18–22, 2008.

INVITED M.N. Kozicki, “The Evolution of Ionic Memory,” 214th Meeting of the Electrochemical Society, Honolulu, HI, October 12–17, 2008.

S.R. Baliga, M.N. Kozicki, G.S. Tompa, and E. Coleman, “Ag–Ge–S Formation on Flexible Substrates for Microscale PMC Memory Circuits,” Materials Research Society Fall Meeting, Boston, MA, December 1–5, 2008.

INVITED – M.N. Kozicki, “Ionic Memory and the Future of Storage?” IDEMA Symposium, Milpitas, CA, December 11, 2008.

INVITED – M.N. Kozicki, “Functional Nanomaterials and the Birth of Ionic Memory,” 138th Annual Meeting of the Minerals, Metals, and Materials Society (TMS), San Francisco, CA, February 15–19, 2009.

INVITED – M.N. Kozicki, “Cation–Based Resistive Memory: Materials and Mechanisms,” Materials Research Society (MRS) Spring Meeting, San Francisco, CA, April 13–17, 2009.

INVITED – M.N. Kozicki, “Ionic Memory and Storage”, Information Storage Industry Consortium (INSIC) Symposium on Alternative Storage Technologies, Santa Clara, CA, August 5, 2009.

INVITED – M.N. Kozicki, “Nanoionics: Applications in Information Technology”, 14th Canadian Semiconductor Technology Conference and Nano and Giga Challenges 2009, Hamilton, Canada, August 10–14, 2009.

INVITED – M.N. Kozicki and S.C.P. Thermadam, “Nanoionics in Memory and Storage,” International Electron Devices and Materials Symposia, Taoyuan, Taiwan, November 19–20, 2009.

INVITED – M.N. Kozicki, “Programmable Metallization Cell Memory in Active and Passive Arrays,” SEMATECH Emerging Technologies in Solid State Devices Workshop, Baltimore, MD, December 5 – 6, 2009.

INVITED – M.N. Kozicki, "Can Solid–State Electrochemistry Save the Memory Industry?" Electrochemistry Gordon Research Conference, Ventura, CA, January 10 – 15, 2010.

INVITED – M.N. Kozicki, “Operational Aspects of Cation–Based Resistive Memory,” MRS Spring Meeting, San Francisco, CA, April 5 – 10, 2010.

INVITED – M.N. Kozicki, “Electrical characterization of Ag–Ge–S and Cu–SiO2 devices,” 1st International Workshop on CBRAM Technology, Stanford University, Palo Alto, CA, April 23–24, 2010.

INVITED – M.N. Kozicki, “Nanoionics and the road to low energy memory,” CMOS Emerging Technologies, Whistler, Canada, May 19 – 21, 2010.

INVITED – M.N. Kozicki, “Overview of Cation–Based Resistive Memory,” Advances in Nonvolatile Memory Materials and Devices, Suzhou, China, July 11 – 16, 2010.

INVITED – M.N. Kozicki, “Introduction to CBRAM,” Non–volatile Memory Conference, Santa Clara, CA, September 22, 2010.

INVITED – M.N. Kozicki, “Cation Memory Mechanisms,” 2010 ITRS Memory Materials Workshop, Tsukuba, Japan, November 30, 2010.

KEYNOTE – M.N. Kozicki, “Atoms to go… Ionic Memory and Data Storage,” IEEE Workshop on Microelectronics and Electron Devices, Boise, ID, April 22, 2011.

KEYNOTE – M.N. Kozicki, “Ionic memory,” 1st International Workshop on RRAM, IMEC, Leuven, Belgium, October 20–21, 2011.

INVITED – M.N. Kozicki, “Ionic Memory,” Workshop on Current Status and Future Directions of NonVolatile Memory Technology, IEEE Santa Clara Valley Electron Devices Society, Santa Clara, CA, November 4, 2011.

INVITED – M.N. Kozicki, “Cation–based Resistive Memory,” Symposium on Emerging Non–Volatile Memory Technologies, IEEE San Francisco Bay Area Nanotechnology Council, Santa Clara, CA, April 6, 2012.

INVITED – M.N. Kozicki, “Conductive Bridge Random Access Memory,’” The Fifth Workshop on Fault-Tolerant Spaceborne Computing Employing New Technologies, Albuquerque, NM, May 29-June 1, 2012.

Y. Gonzalez-Velo, H. J. Barnaby, A. Chandran, D. R. Oleksy, P. Dandamud, M. N.Kozicki, K. E. Holbert, M. Mitkova, M. Ailavajhala, and P. Chen, “Effects of Cobalt-60 Gamma-Rays on Ge-Se Chalcogenide Glasses and Ag/Ge-Se Test Structures,” IEEE Nuclear and Space Radiation Effects Conf., Miami, FL, July 16-20, 2012.

INVITED – M.N. Kozicki, “Will Future Non-Volatile Memories Disrupt NAND?” Evening Panel, International Electron Devices Meeting (IEDM), San Francisco, CA, December 10-12, 2012.

H. Barnaby, A. Edwards, D. Oleksy, and M. Kozicki, "Finite element modeling of Ag transport and reactions in chalcogenide glass resistive memory," 2013 IEEE Aerospace Conference, Big Sky, MT, March 2-9, 2013.

H. Barnaby, M. Kozicki, D. Oleksy, Arthur Edwards; “Finite Element Modeling of Ag Transport and Reactions in Chalcogenide Glass Resistive Memory.” APS March Meeting, Baltimore, MD, March 18-22, 2013.

M. Mitkova, M. Ailavajhala, Y. Gonzales-Velo, C.D. Poweleit, H. J. Barnaby, M. N, Kozicki, D.P. Butt, “ New Functionality of Chalcogenide Glasses for Radiation Sensing of Nuclear Wastes” 3rd International Conference on Research Frontiers in Chalcogenide Cycle Science and Technology, Delft, The Netherlands, May 27-28, 2013.

INVITED M.N. Kozicki, “Ionic memory and the future of the semiconductor industry,” 57th International Conference on Electron, Ion, and Photon Beams and Nanofabrication (EIPBN), Nashville, TN, May 28 – 31, 2013.

P. Dandamudi, M. N. Kozicki, H. J. Barnaby, Y. Gonzalez-Velo, M. Mitkova, K. E. Holbert, M. Ailavajhala, and W. Yu, "Sensors Based on Radiation-Induced Diffusion of Silver in Germanium Selenide Glasses," IEEE Nuclear and Space Radiation Effects Conf. (NSREC), San Francisco, CA., July 8-12, 2013.

Y. Gonzalez-Velo, H. J. Barnaby, M. N. Kozicki, P. Dandamudi, A. Chandran, K. E. Holbert, M. Mitkova, and M. Ailavajhala, "Total-Ionizing-Dose Effects on the Resistance Switching Characteristics of Chalcogenide Programmable Metallization Cells,"  IEEE Nuclear and Space Radiation Effects Conf., San Francisco, CA., July 8-12, 2013.

P. Dandamudi, H. J. Barnaby, M. N. Kozicki, Y. Gonzalez-Velo, and K. E. Holbert, "Total Ionizing Dose Tolerance of the Resistance Switching of Ag-Ge40S60 based Programmable Metallization Cells," Radiation Effects on Components and Systems Conference (RADECS), Oxford, UK, September 23-27 2013.

INVITED M.N. Kozicki, “Ionic Memory - Hype or Reality,” IEEE Waves and Devices Meeting, Tempe, AZ, October 10, 2013.

INVITED Michael N Kozicki, Pradeep Dandamudi, Hugh J Barnaby, and Yago Gonzalez-Velo, “Programmable Metallization Cells in Memory and Switching Applications,” 224th ECS Meeting, San Francisco, CA, October 27 – November 1, 2013.

INVITED M.N. Kozicki, “Ionic Memory - Materials and Devices,” AVS 60th International Symposium, Long Beach, CA, October 27 – November 1, 2013.    

INVITED - M. N. Kozicki, H. J. Barnaby, M. Mitkova, Y. Gonzalez-Velo, P. Dandamudi, M. Ailavajhala, et al., "Radiation tolerance of Programmable Metallization Cell memory devices," American Chemical Society Spring Meeting, Dallas, TX, March 16-20, 2014.

M. Saremi, S. Rajabi, H. J. Barnaby, and M. N. Kozicki, "The effects of process variation on the parametric model of the static impedance behavior of programmable metallization cell (PMC)," MRS Spring Meeting, San Francisco, CA, April 21-25, 2014.

M. S. Ailavajhala, Y. G. Velo, K. Holbert, H. Barnaby, M. Kozicki, D. P. Butt, et al., "Experimental and modeling approach to studying silver diffusion under gamma radiation," MRS Spring Meeting San Francisco, CA, April 21-25, 2014.

K. Wolf, D. Tenne, H. J. Barnaby, M. N. Kozicki, and M. Mitkova, "Influence of electron-beam on performance of chalcogenide based memristors," MRS Spring Meeting, San Francisco CA, April 21-25, 2014.

T. Nichol, D. Tenne, P. Miranda, H. J. Barnaby, M. N. Kozicki, D. Butt, et al., "Structural and material changes in chalcogenide glasses under ion irradiation " IEEE NSREC, Paris, France July 14 – 18, 2014.

J. L. Taggart, Y. Gonzalez-Velo, D. Mahalanabis, A. Mahmud, H. J. Barnaby, M. N. Kozicki, et al., "Ionizing radiation effects on non-volatile memory properties of programmable metallization cells," IEEE NSREC, Paris, France July 14 – 18, 2014.

P. Dandamudi, A. Mahmud, M. N. Kozicki, Y. Gonzalez-Velo, H. J. Barnaby, B. Roos, et al., "Flexible Sensors based on Radiation-Induced Diffusion of Silver in Ge20Se80 Chalcogenide Glass,", Paris, France July 14 – 18, IEEE NSREC, 2014.

D. Mahalanabis, H. J. Barnaby, M. N. Kozicki, and S. Rajabi, “Investigation of Single Event Induced Soft Errors in 1T1R PMC Memory,” IEEE NSREC, Paris, France July 14 – 18, 2014.

INVITED – M.N. Kozicki, “Current status of cation-based resistive memory,” International conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, September 8-11, 2014.

K. Wolf, M. Ailavajhala, D. Tenne, H. Barnaby, M. N. Kozicki M. Mitkova, “E-beam Induced Effects in Ge-Se Based Redox Conductive Bridge Memory Devices and Thin Films,” 144th TMS Annual Meeting and Exhibition, Orlando, FL, March 15-19, 2015.

J. L. Taggart, M. L. McLain, H. J. Barnaby, M. N. Kozicki, “Combined Neutron/Gamma-Ray Effects in Ag-Ge30Se70 Based Programmable Metallization Cells,” 2015 Hardened Electronics and Radiation Technology (HEART) Technical Interchange Meeting, Chantilly, VA, April 20-24, 2015.

K. Wolf, G. Belev, M. Ailavajhala, D. Tenne, H. Barnaby, M. N. Kozicki, M. Mitkova, “Low and High Intensity X-rays Induced Effects in Ge-Se Glasses and Programmable Metallilzation Cell (PMC) Devices Based on Them,” Third International Conference on Radiation ansd Applications in Various Fields of Research, Budva, Montenegro, June 8-12, 2015.

K. Wolf, M. Ailavajhala, D. Tenne, H. Barnaby, M. N. Kozicki, M. Mitkova, “Radiation Effects in Chalcogenide Glass – Silver Systems and Nanoionic Devices Based on Such Systems,” Amorphous and Nanocrystalline Chalcogenides 7, Cluj, Romania, June 5-10, 2015.

W. Chen, R. Fang, Y. Gonzalez Velo, A. Belmonte, H. Barnaby and M. Kozicki, “Impedance Spectroscopy of Cu-SiO2 Based Programmable Metallization Cells,” 57th Electronic Materials Conference, Columbus, OH, June 24-26, 2015.

INVITED - M.N. Kozicki, H. Barnaby, and J. Chae, “The Programmable Metallization Cell Technology Platform” Northrop-Grumman Nanotechnology Workshop, Redondo Beach, CA, July 6-7, 2015.

D. Mahalanabis, H. J. Barnaby, M. N. Kozicki, E. Deionno, A. Mahmud, M. Kay, “Analysis of Single Event Upset Susceptibility in CBRAM 1T-1R Memory,” IEEE Nuclear and Space Radiation Effects Conf., Boston, MA, July 13-17, 2015.

W. Chen, H. J. Barnaby, M. N. Kozicki, Y. Gonzalez-Velo, R. Fang, W.Yu, S. Yu, K. Holbert, “A Study of Gamma-ray Exposure of Cu-SiO2 Programmable Metallization Cells,” IEEE Nuclear and Space Radiation Effects Conf., Boston, MA, July 13-17, 2015.

 

Books

M.N. Kozicki with S.A. Hoenig and P.J. Robinson, “Cleanrooms: Facilities and Practices”, Van Nostrand Reinhold, New York, NY, 1990.

M.N. Kozicki, “Modern Electronics Guidebook”, Van Nostrand Reinhold, New York, NY, 1992.

 

CD–ROM

M.N. Kozicki, “CleanDisc”, Forth Research, Scottsdale, AZ, 1995.

 

Chapters/sections in Books

M.N. Kozicki, "Electrical Resistance" in “Macmillan Encyclopedia of Physics”, J.S. Rigden – Ed., Macmillan, New York, NY, 1996, pp 405–406.

M.N. Kozicki, "Resistors" in “Macmillan Encyclopedia of Physics”, J.S. Rigden – Ed., Macmillan, New York, NY, 1996, pp 1372–1373.

M. Mitkova and M. N. Kozicki, “Fourfold coordinated silver–containing chalcogenide glasses – basic science and applications in optical programmable metallization cell (PMC) technologies,” Chapter 8 of Optoelectronic Materials and Devices Series, Vol. 1, 2004, Non–Crystalline Materials for Optoelectronics, (Editors: Gerald Lucovsky and Mihai A. Popescu), INOE Publishing House, 211 – 258 (2004).

M.N. Kozicki and M. Mitkova, “Memory Devices Based on Mass Transport in Solid Electrolytes,” in Nanotechnology (Volume 3: Information Technology 1), Ed: R. Waser, Wiley–VCH Verlag GmbH&Co. KGaA, Chapter 16, 485–575 (2008).

 

Books edited

D. Drain, “Handbook of Experimental Methods for Process Improvement”, Chapman and Hall, New York, 1997.

E.W. Greeneich, “Analog Integrated Circuits”, Chapman and Hall, New York, 1997.

D. Drain, “Statistical Methods for Industrial Process Control”, Chapman and Hall, New York, 1997.

 

Conference proceedings edited

 

Y. Fujisaki, P. Dimitrakis, E. Tokumitsu, and M.N. Kozicki, “Materials and Physics of Emerging Nonvolatile Memories,” Materials Research Society, Vol. 1430 (2012).

 

Magazine Article

M.N. Kozicki, “New Accommodations and Attitudes Open Cleanrooms to Workers with Disabilities”, CleanRooms, November 1993, 12 –16.

 

SHORTCOURSE AND TUTORIAL ACTIVITIES

Presenter in the ASU professional program “Cleanroom Construction Workshop”, 2000.

Director and principal instructor, National Shortcourse Program “Controlled Environments”, 1994 – 1997.

Presenter, National Program “Cleanroom Construction Workshop”, 1996 – 1997.

Director and principal instructor, National Shortcourse Program “Cleanrooms: Facilities and Practices”, 1986 – 1993.

Director and instructor, ServiceMaster Training Program “Microcontamination Control and Cleanroom Technology”, 1994.

Director and instructor, National Shortcourse Program “Managing Hazardous Materials”.

Presenter, National Technological University Broadcast Program “Basics of Microcontamination Control”.

Faculty member for the Maricopa County Bar Association’s Technology Transfer Opportunities in Arizona program, 2003.

Presenter, short course on “Ionic Devices”, Gwangju Institute of Science and Technology, Gwangju, Korea, November 2009.

Tutorial speaker, Materials Research Society Spring Meeting, San Francisco, CA, April 2010.

Seminar speaker, Gwangju Institute of Science and Technology, Gwangju, Korea, February 2011.

Seminar speaker, Daejeon NanoFab, Daejeon, Korea, February 2011.

Tutorial speaker, International Memory Workshop, Monterey, CA, May 2011.

Presenter, Beyond CMOS, IMEC, Leuven, Belgium, September, 2011 - 2015.

 

MISCELLANEOUS PUBLIC OUTREACH

Appeared in the Fox 10 News morning show which was broadcast live from the CSSER cleanroom in April 1999.

Appeared in “Brainstorm”, an internationally syndicated TV program promoting science to teenagers (originally aired in 2000).

Appeared in ABC 15 news program in January 2001.

Appeared in “Horizon”, the local PBS news and events analysis program in May 2001.

Presenter in the “Journeys of the Mind” series, part of the President’s Community Enrichment Program in 2000, 2001 and 2003.

Appeared in “Horizon”, the local PBS news and events analysis program in November 2007.

Appeared with Richard Brown, research artist in residence in the School of Informatics at the University of Edinburgh, in the first public “Convergent Conversations” event at the Informatics Forum on 27 September 2008.

Featured presenter in the public lecture program in the Museum of Communication, Scotland in June 2009.

Featured presenter in the Deans Lecture Series at ASU in January 2010.

Guest speaker at the Arizona Technology Enterprises Inventorship Recognition reception in February, 2012.

 

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Current to 8/25/15